Determination in 3d Modelling Study of the Width Emitter Extension Region of the Solar Cell Operating in Open Circuit Condition by the Gauss’s Law

In this article, we are discussing the Gauss’s law used to determine the width emitter extension region of the solar cell operating in open circuit condition. Taking into account the grain size (g), the grain boundary recombination velocity (Sgb) and the emitter doping density (Nemitter), the Gauss’s Law helped us to calculate the width emitter extension region of the solar cell operating in open circuit condition. To determine the width emitter extension region, we first showed that grain size (g), grain boundary recombination velociy (Sgb) are oppesite effects and concluded that best solar cells are characterized by low junction extension region width observed only with high grain size (g) and low grain boundary recombination velocity (Sgb). In a second way using Gauss’s law, we deduced that the ratio R of the width emitter extension region on the base extension region is equal to the ratio of the base doping density to emitter doping density. We concluded that when 3 15 emitter cm 10 5 . 1 N − ⋅ < , the ration R is practically constant and when 3 16 emitter 3 16 cm 10 5 N cm 10 − − ⋅ ≤ ≤ the ration R variation is soft and we finely saw that the emitter contribution to the photoccurent can be neglected for emitter doping density greater than 10 17 cm -3 .